C-V Characterization of Plasma Etch-damage Effect on (100) SOI
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چکیده
منابع مشابه
Roughening in Plasma Etch Fronts of Si(100)
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15 صفحه اولPLASMA ETCH INDUCED SURFACE DAMAGE AND ITS IMPACTS ON GaAs SCHOTTKY DIODES
Dry etch plays a very important role in fabrication of modern IIIV compound semiconductor devices. Compared to wet chemical etch, dry etch, which uses reactive gas plasma to remove substances chemically, has many advantages, such as better controllability, higher pattern reproducibility, and lower cost. Dry etch can induce surface damages that will affect physical and electrical properties of d...
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ژورنال
عنوان ژورنال: Journal of the Korean Institute of Electrical and Electronic Material Engineers
سال: 2008
ISSN: 1226-7945
DOI: 10.4313/jkem.2008.21.8.711